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2013/12/25 ver.1 page 1 spc6601 n & p pair enhancement mode mosfet description applications the spc6601 is the n- a nd p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter features pin configuration( tsot? 23-6p ) ? n-channel 30v/2.8a,r ds(on) = 68m ? @v gs =10v 30v/2.3a,r ds(on) = 78m ? @v gs =4.5v 30v/1.5a,r ds(on) = 108m ? @v gs =2.5v ? p-channel -30v/-2.8a,r ds(on) =105m ? @v gs =- 10v -30v/-2.5a,r ds(on) =120m ? @v gs =-4.5v -30v/-1.5a,r ds(on) =150m ? @v gs =-2.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? tsot? 23-6p package design part marking
2013/12/25 ver.1 page 2 spc6601 n & p pair enhancement mode mosfet pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking spc6601ts26rgb tsot- 23-6p 01yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spc6601ts26rgb : tape reel ; pb ? free ; halogen -free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit n-channel p-channel drain-source voltage v dss 30 -30 v gate ?source voltage v gss 12 12 v continuous drain current(t j =150 ) t a =25 i d 2.8 -2.8 a t a =70 2.3 -2.1 pulsed drain current i dm 10 -8 a continuous source current(diode conduction) i s 1.25 -1.4 a power dissipation t a =25 p d 1.15 w t a =70 0.75 operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient t 10sec r ja 50 52 /w steady state 90 90
2013/12/25 ver.1 page 3 spc6601 n & p pair enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250ua n-ch 30 v v gs =0v,i d =-250ua p-ch -30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua n-ch 0.8 1.6 v ds =v gs ,i d =-250ua p-ch -0.4 -1.0 gate leakage current i gss v ds =0v,v gs =12v n-ch 100 na v ds =0v,v gs =12v p-ch 100 zero gate voltage drain current i dss v ds = 21v,v gs =0v n-ch 1 ua v ds =-21v,v gs =0v p-ch -1 v ds = 21v,v gs =0v t j =55 n-ch 10 v ds =-21v,v gs =0v t j =55 p-ch -10 on-state drain current i d(on) v ds 5v,v gs = 10v n-ch 6 a v ds -5v,v gs =-10v p-ch -6 drain-source on-resistance r ds(on) v gs = 10v,i d = 2.8a n-ch 0.048 0.068 ? v gs =-10v,i d =-2.8a p-ch 0.077 0.105 v gs = 4.5v,i d = 2.3a n-ch 0.054 0.078 v gs =-4.5v,i d =-2.5a p-ch 0.092 0.120 v gs = 2.5v,i d = 1.5a n-ch 0.079 0.108 v gs =-2.5v,i d =-1.5a p-ch 0.118 0.150 forward transconductance gfs v ds =4.5v,i d =2.8a n-ch 4.6 s v ds =-10v,i d =-2.8a p-ch 4 diode forward voltage v sd i s = 1.25a,v gs =0v n-ch 0.8 1.2 v i s =-1.2a,v gs =0v p-ch -0.8 -1.2 dynamic total gate charge q g n-channel v ds =15 ,v gs =4.5v , i d 2.0a p-channel v ds =-15v ,v gs =-4.5v , i d -2.0a n-ch 4.2 6 nc p-ch 5.8 gate-source charge q gs n-ch 0.6 p-ch 0.8 gate-drain charge q gd n-ch 1.5 p-ch 1.5 turn-on time t d(on) n-channel v dd =15 , r l =10 ? v gen =10v , r g =3 ? p-channel v dd =-15v , r l =15 ? v gen =-10v , r g =3 ? n-ch 2.5 ns p-ch 6 t r n-ch 2.5 p-ch 3.9 turn-off time t d(off) n-ch 20 p-ch 40 t f n-ch 4 p-ch 15
2013/12/25 ver.1 page 4 spc6601 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2013/12/25 ver.1 page 5 spc6601 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2013/12/25 ver.1 page 6 spc6601 n & p pair enhancement mode mosfet typical characteristics ( n-channel )
2013/12/25 ver.1 page 7 spc6601 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2013/12/25 ver.1 page 8 spc6601 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2013/12/25 ver.1 page 9 spc6601 n & p pair enhancement mode mosfet typical characteristics ( p-channel )
2013/12/25 ver.1 page 10 spc6601 n & p pair enhancement mode mosfet tsot-23- 6p package outline
2013/12/25 ver.1 page 11 spc6601 n & p pair enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com

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